AON6970 30v dual asymmetric n-channel alphamos general description product summary q1 q2 30v 30v i d (at v gs =10v) 58a 85a r ds(on) (at v gs =10v) <5.4m w <1.5m w r ds(on) (at v gs =4.5v) <8.5m w <2.3m w 100% uis tested application 100% rg tested symbol v ds v ? latest trench power alphamos ( mos lv) technology ? very low r ds (on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al v ds max q1 parameter gate-source voltage drain-source voltage absolute maximum ratings t a =25c unless otherwise noted max q2 units v v 20 2 0 30 bottom view pin1 dfn5x6d top view bottom view pin1 top view q2: srfet tm s oft r ecovery mos fet : integrated schottky diode g1 d1 d1 d1 g2 s2 s2 s2 phase (s1/d2) d1 phase d1 s1/d2 s1/d2 v gs i dm i as e as v ds spike v spike t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 20 25 25 30 steady-state 50 56 60 67 steady-state r q jc 3.3 1.2 4 1.6 v 100ns avalanche energy l=0.05mh c 36 36 t c =25c c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w maximum junction-to-case t c =100c power dissipation a p dsm t a =25c t a =25c power dissipation b i dsm t a =70c p d 31 t c =100c pulsed drain current c continuous drain current i d 35 19 t c =25c 12 gate-source voltage mj avalanche current c continuous drain current a units 65 31 106 a 31 v 66 20 2 0 a 340 42 58 85 36 135 c w 24 33 78 thermal characteristics 5 4.1 3.2 2.6 junction and storage temperature range -55 to 150 w t a =70c rev0 : sep 2012 www.aosmd.com page 1 of 10
AON6970 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 4.4 5.4 t j =125c 6.8 8.3 6.7 8.5 m w g fs 80 s v sd 0.7 1 v i s 35 a c iss 1171 pf c oss 284 pf c rss 59 pf r g 0.3 0.6 0.9 w q g (10v) 17 23 nc q g (4.5v) 8 11 nc q gs 4.7 nc q gd 2 nc t d(on) 6.5 ns t r 15.5 ns t 17 ns v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance m w v gs =0v, v ds =0v, f=1mhz forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a v ds =v gs i d =250 m a reverse transfer capacitance v gs =10v, i d =20a diode forward voltage total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge v gs =10v, v ds =15v, r l =0.75 w , r =3 w gate resistance maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime t d(off) 17 ns t f 2.5 ns t rr 12.3 ns q rr 22.5 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s body diode reverse recovery time turn-off fall time r gen =3 w body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev0 : sep 2012 www.aosmd.com page 2 of 10
AON6970 q1-channel: typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 3.5v 6v 10v 4.5v 4v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a voltage (note e) i d =11.5a 25 c 125 c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 10 12 14 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c (note e) rev0 : sep 2012 www.aosmd.com page 3 of 10
AON6970 q1-channel: typical electrical and thermal characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 10ms 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =4 c/w rev0 : sep 2012 www.aosmd.com page 4 of 10
AON6970 q1-channel: typical electrical and thermal characteristics 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =60 c/w rev0 : sep 2012 www.aosmd.com page 5 of 10
AON6970 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =55c 100 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 1.2 1.5 t j =125c 1.6 2 1.8 2.3 m w g fs 100 s v sd 0.46 0.6 v i s 85 a c iss 3973 pf c oss 1100 pf c rss 134 pf r g 0.3 0.65 1 w q g (10v) 60 85 nc q g (4.5v) 27 38 nc q gs 12 nc q gd 10 nc t d(on) 11.5 ns t r 16 ns t 38 ns v ds =5v, i d =20a switching parameters maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time total gate charge turn-off delaytime v gs =0v, v ds =0v, f=1mhz gate source charge total gate charge diode forward voltage v gs =10v, v ds =15v, r l =0.75 w , r =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz gate drain charge gate resistance i s =1a,v gs =0v v gs =4.5v, i d =20a zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =10ma, v gs =0v v gs =10v, v ds =15v, i d =20a m w i dss ma forward transconductance v ds =v gs i d =250 m a v ds =0v, v gs =20v v gs =10v, i d =20a t d(off) 38 ns t f 7 ns t rr 20.8 ns q rr 60 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev0 : sep 2012 www.aosmd.com page 6 of 10
AON6970 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 3v 4v 10v 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a q2-channel: typical electrical and thermal characteristics 0 1 2 3 4 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) rev0 : sep 2012 www.aosmd.com page 7 of 10
AON6970 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms 0 100 200 300 400 500 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - case c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c q2-channel: typical electrical and thermal characteristics operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =1.6 c/w rev0 : sep 2012 www.aosmd.com page 8 of 10
AON6970 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) q2-channel: typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =67 c/w rev0 : sep 2012 www.aosmd.com page 9 of 10
AON6970 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0 : sep 2012 www.aosmd.com page 10 of 10
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